1. Pv Sol 7 5 Cracks Video

PV SOL 5.5 CRACK A laboratory scale. 8 Silverlaketech 5 Custodian results data Replicator you 5 CRACKs. Pv sol expert free 4 expert the shop 0 wishing. Pv sol expert free 4 expert the shop 0 wishing up able cracks, pv. 2014 december michelle.sisnetusa.com. Anyone has PV SOL Premium 7.5 crack? Grateful if you could share it. PV*SOL online is a free tool for the calculation of PV systems. Made by Valentin Software, the developers of the full featured market leading PV simulation software PV*SOL, this online tool lets you input basic data like location, load profiles, solar power (photovoltaic, PV) module data, Inverter manufacturer. We then search. Pv Sol was added to DownloadKeeper this week and last updated on 17-Aug-2019.New downloads are added to the member section daily and we now have 299,578 downloads for our members, including: TV, Movies, Software, Games, Music and More. It's best if you avoid using common keywords when searching for Pv Sol. Words like: crack, serial, keygen, free, full, version, hacked, torrent, cracked, mp4.

The EpiX wafer mapping station is the latest LayTec product for compound semiconductor R&D. Currently, there is an ongoing boom in MOCVD grown III-V lasers, with a respective revival in related material research.

LayTec already supports this with new in-situ metrology products such as EpiTT VCSEL or EpiTT FaceT and EpiX is next. The first EpiX station was installed at a customer site in mid-2018.

It combines white light reflectance with photoluminescence (PL) measurements, and thus allows for a comprehensive 2D analysis in a wide spectral range (400 nm to 1700 nm). Up to four PL excitation wavelengths can be combinedwith an optional eye-safe plug-in interface for customer’s additional external excitation lasers. Integrated software provides full data analysis, including automated detection of VCSEL optical parameters (cavity-dip, stop-band position), single layer and multiple layer thickness fits, film composition and multiple-peak analysis. Moreover, customers benefit from sample’s statistics and pass/fail classification on wafer-level and die-level.The basic design feature of EpiX mapping stations is modularity and customizability in hardware and software. This is key for customers regularly adjusting their research projects to new materials and latest nano-science concepts. Hence EpiX is designed as a long-lasting workhorse with multiple upgrade options: more optical heads (wafer bow, reflectance-anisotropy, sheet-resistance, wafer thickness, optical transmission), extended wavelength range, software interfaces (e.g. For user-owned spectral analysis libraries) and for using insitu data measured during epitaxy in center of wafer as starting point for post-epi 2D mapping analysis.See the figures in the.

Precise control of laser facet temperature during facet passivation and coating of stacked GaAs-based laser bars in an MBE chamber is a challenge. Until recently, the process temperature of laser facets was only estimated indirectly by the temperature of the heater, although it is a known fact that this method cannot provide the real temperature of the facet surface (see Fig.2).Consequently, deviations in this temperature significantly affected process quality (facet cleaning and facet passivation) and production yield.

As a solution to this problem, LayTec has developed the EpiTT FaceT – a new in-situ spectroscopic metrology tool which is capable of measuring the temperature of GaAs laser facets during cleaning and passivation (accuracy ± 1K from room temperature up to 400°C) in conjunction with real-time sensing of the ZnSe passivation layer thickness (0 - 50nm). Two EpiTT FaceT systems, capable of monitoring the facet temperature in multi-stack configurations of laser bars at rotating platens in MBE, have been already installed at customer site in 2018 and a third one is scheduled for shipment to a leading industry customer in 2019 / Q1.See the figures in the.

LayTec is proud to announce the shipment of its new metrology tool “EpiTT Band Edge” to the Walter Schottky Institute (WSI) in Munich. The tool is specially designed for MBE of InP- and GaAs-based device structures.

Researchers in Prof. Amman’s group at WSI are growing InP-based VCSELs in several MBE chambers in close collaboration with partners from the laser industry. Hence, rather unusual for university institutes, accurate chamber-to-chamber matching and extreme run-to-run reproducibility is a must. Since last September, after shipment and installation of an EpiTT Band Edge, finally all MBE systems at WSI are equipped with EpiTTs for highly accurate growth-rate control during VCSEL epitaxy (utilizing automated pyrometric Fabry-Perot analysis) and Band Edge wafer emperature sensing. Accordingly, all MBE systems are always running at exactly the same absolute substrate temperature scale.

Band Edge temperature sensing is a new Add-On option to EpiTTs and is designed for seamless integration into the EpiTT fiber-optic head technology. Using the substrate heater radiation as light-source, the optimum temperature range is 350-600°C for InP wafers (see Fig.

1, reproducibility is ± 1K) and covers well the growth conditions of InP VCSEL devices for ultrafast data communication and gas sensing applications.See the figures in the. We are happy to inform you that as of November 30, LayTec has become part of m-u-t-Group.LayTec will keep operations, management and brand unchanged. This acquisition will not affect the quality of our customer-relations and our network of sales and service partners. All contacts will remain as is.m-u-t is a public German mid-sized financial holding, listed on the German Scale index. M-u-t focuses on optical measurement technology and thus, LayTec is a perfect fit in the portfolio.

To learn more about m-u-t, please visitThe LayTec team is looking forward to working with m-u-t as we see a lot of synergies especially in technology development. This is one of several aspects you soon will profit from due to the fruitful collaboration between LayTec and the other m-u-t Group member companies. In Q2 / 2017 LayTec received a major order from a glass manufacturer in Europe. The multi-head LayTec Flames inline metrology system is equipped with newly developed analysis algorithms for SPC of the sol-gel AR coating on structured PV glasses.

Despite the challenging task of measuring on the 3D micro-patterned surface of the glasses, the thickness uniformity of the AR coating is detected by the multiple-head system with nanometer accuracy in robust 24 / 7 operation. Both porousity and film thickness of the ARC is determined for feed-forward control through the customers MES system. 2a gives a sketch of the glass surface and Fig.

Pv Sol 7 5 Cracks Video

2b is an example analysis where the measured spectral reflectance (blue line) is nicely fitted by the model fitting curve (red line). The measured effective porousity and optical thickness serve as SPC control parameters for the manufacturing line.See the figures in the. LayTec proudly announces the shipment of two ILMetro in-line metrology stations to our Chinese customer CTIEC. CTIEC establishes a thin-film PV production line in Chengdu (PR China) based on a technology developed by its German subsidiary CTIEC / CTF Solar. The two 24 / 7 ILMetro inline metrology stations are fully integrated into the fab’s manufacturing line and MES system (Fig.1).

Compare TaxAct desktop tax preparation software to get your biggest refund guaranteed. TaxAct automatically finds & maximizes your tax deductions. Easy, fast, affordable.

Station #1 ensures 100% quality control of the incoming TCO coated solar glass substrates. It hosts a Suragus EddyCus in-line sheet-resistant unit and a LayTec Flames spectroscopic multi-head reflectance and transmittance system. Combining Eddy-Current and spectral-optical methods provides full and automated SPC of all key performance parameters of the TCO glass. The measured SPC data of station # 1 are forwarded both to the fab’s MES system and to station #2.

ILMetro station #2 combines a LayTec Flames with a LayTec SolR® metrology system. Multiple optical heads are detecting IR and vis-NIR spectral reflectance from the front side and from the back side of the CdTe thin-film PV modules. The resulting thickness uniformity of the CdTe absorber layers and of the very thin CdS buffer layers again are permanently reported with high accuracy to the fab’s MES system. LayTec’s ILMetro in-line metrology stations meet the IP54 and CE standards and are equipped with the necessary multiple interfaces for communication with the conveyor systems, third-party visual inspection systems as well as the fab’s MES and LAN automation system.

Remote service and software maintenance is provided through firewalled LAN/www.See the figures in the. A comprehensive EpiCurve® TT / Pyro 400 in-situ metrology hybrid-system has recently been shipped to a North American industry customer. This metrology station combines automated in-situ wafer bow and film thickness measurements with two pyrometry wavelengths: NIR at 950 nm and near-UV.

In GaN-on-SiC and GaN-on-Si MOCVD technology, the growth of sophisticated nucleation and strain management layers is essential for the quality of the material and the performance of the final devices. At the same time, these layers are a challenge for highly accurate wafer temperature control: IR light from other hot parts of the reactor is scattered into the NIR pyrometer and causes Fabry-Perot artifacts, affecting its precision. However, the GaN buffer specifically emits thermal radiation in the near UV and the temperature measured with Pyro 400 is not affected by the NIR thermal radiation scattered by the buried functional layers.

Therefore the combination of NIR pyrometry with Pyro 400 allows to control the wafer temperature precisely during the whole deposition process.For more information please download our. Last year we reported the first sale of EpiTT VCSEL for InP based epitaxy to a European lead customer.

In Q2 / 2017 we finished the development of the respective tool for GaAs based VCSEL growth. The next two systems will be shipped in September 2017 to a leading VCSEL manufacturer in the USA. EpiTT VCSEL adds full spectral capabilities to the established performance of EpiTT (wafer temperature sensing at 950 nm and growth rate measurement based on 3 wavelength reflectance). Two spectral ranges can be chosen: 630 nm - 1100 nm for GaAs based NIR VCSEL epitaxy and 1000 nm - 1700 nm for InP based IR VCSEL processes.

Either system delivers direct access to cavity dip position and stop-band wavelength control already during MOCVD. The cavity dip position is extremely sensitive to the accuratethickness and composition of QWs (quantum wells) / QBs (quantum barriers), oxidizing AlAs and other functional layers in the cavity.

For optimum laser performance, this cavity dip position has to be in exact correlation to QW emission wavelength. Here another strength of EpiTT VCSEL comes into play: tight control of wafer temperature for highly precise QW composition. However, during cavity growth for some VCSEL designs, the standard wavelength of the pyrometer overlaps with the high reflectivity band of the underlying n-DBR (n-doped distributed Bragg reflector), causing high reflectance and hence low thermal emissivity of the wafer.

Therefore, we added the possibility to customize the pyrometer wavelength of the EpiTT VCSEL. A second pyrometer module can be chosen between 810 nm, 850 nm, 980 nm. This allows accurate wafer temperature measurement for a wide range of VCSEL MOCVD processes.

New in-situ results by Dr. Christine Wang and colleagues at the MIT Lincoln Laboratory (USA) have been presented in a recent paper 1. The team worked on improving the MOCVD growth of InP-based QCLs in a Veeco D-125 multi-wafer (3x2”) reactor. Dr. Wang reported two major findings:(1) The growth of high-performance QCL structures requires the deposition of a complex sequence of coupled quantum wells (AlInAs, GaInAs). During this process, the cumulative Indium surface segregation has to be carefully compensated in the growth recipe to keep the targeted lattice matched throughout the full QCL structure.(2) Even under optimized growth conditions, a certain in-terface-grading is unavoidable, especially at the GaInAs-to-AlInAs interfaces.

However, optimum QCL performance can be achieved by taking into account these interface grading effects in the calculations of the QCL target structure.EpiCurve® TT was the key to these findings. Fig. 3 shows in-situ reflectance at 450 nm and curvature of the two decisive MQW runs. Reflectance oscillations correspond to each barrier and well layer and each layer is easily resolved. In Fig. 3b, the high-resolution wafer bow sensing verified the compressive strain accumulation at the AlInAs-to-GaInAs interface.

After recipe optimization, the 450 nm reflectance could be used as a characteristic finger-print of the formation of every single graded interface among the hundreds constituting a single QCL layers. Learn more about EpiCurve® TT at laytec.de/epicurve! While in-situ reflectance and temperature on a multi-pocket satellite susceptor can be measured very accurately, in-situ curvature monitoring is more tricky because it is rather challenging to find the wafer center. The new release of our control and analysis software EpiNet 2017 provides a solution for this problem. Fig. 1 shows the susceptor layout for a GaN/Sapphire run performed at Ferdinand-Braun-Institute (Berlin, Germany): Pocket #8 was loaded with a single 2' reference wafer, Pockets #5 and #6 contain three 2' wafers each, Pockets #1–4, 7 have dummy wafers.In Fig. 2, the wafer bow signals of the pockets loaded with epi wafers are compared. The values of the multi-pockets comply nicely with the those of the single-pocket. Analysis functions for wafer bow like curve slope (marked by a red line) work well both on single and multi-pocket.

Besides, the signal-to-noise ratio (SNR) of the measurements on multi-pockets (shown here without filtering) stays within spec like that of the single wafer pocket.To learn about further new features of EpiNet 2017, please visit.See the figures in the. Dennis Dachkovski will enforce our team as a sales manager. He will work closely with our customers and distribution partners in Asia. He brings a profound scientific background as a graduate in physics and valuable experience in process integration and thin film characterization which he gathered at Infineon.Benjamin Klessen has joined LayTec as a customer support engineer to provide service, training and installation of LayTec systems at customer sites worldwide. Benjamin graduated in photonics (with a focus on optics and electronics) and has profound experience in service and installation of optical inspection tools.See the photos of our new colleagues in the. LayTec is proud to deliver its 2000th in-situ metrology system since its foundation in 1999!

An with the figure 2000 in its serial number has been shipped to Compound Semiconductor Centre (CSC, Cardiff, UK) – a joint venture between compound semiconductor specialists IQE and Cardiff University.CSC works on providing a complete capability value chain from high-end R&D through product and process innovation to high value, large-scale manufacturing. According to Dr. Wyn Meredith, Director of CSC, “This EpiTT and other LayTec systems already installed in our labs provide unrivalled precision and sophisticated analysis algorithms, which is crucial for process optimization in semiconductor manufacturing environment.”LayTec's founder and CEO Dr. Thomas Zettler commented: 'It is significant that our 2000th in-situ tool is delivered to a research institution with a strong connection to industry. LayTec has always set a great value on cooperating with both industry and R&D. Until now, we have equipped hundreds of customers worldwide with state-of-the-art metrology, mainly in the field of LED and laser production. In the last few years we also entered the PV, display and advanced silicon markets. Meanwhile, our product portfolio covers all areas of process monitoring: in-situ, in-line, lab-line and map-line metrology.

Due to this market diversification, we believe to deliver the next thousand tools much faster than before. We are proud that our tools make the related industries more effective and more productive.' LayTec is happy to annoucne the installation of its X Link® in-line at Astronergy in China!

The tool is integrated into a production line of high-efficiency PV modules for in-line control of EVA or polyolefin cross-linking degree immediately after lamination. It allows for a 100% monitoring of produced PV modules. The measured data is directly fed into the Manufacturing Execution System (MES). The data helps to quickly optimize lamination process for better cross-linking quality by adjusting the heating zones and the duration of lamination.

The result is a perfect lamination process, which is the key to high-quality modules. The whole measurement procedure is non-destructive and does not affect the functionality of the tested modules. LayTec has launched X Cal – a set of tools for on-site calibration of. X Cal consists of three components: X Cal-F calibrates X Link’s force measurement, X Cal-T – temperature measurements and X Cal-M – LXM reading (LXM= LayTec cross-linking metric).

X Cal set is delivered with a certified calibration. The tool guarantees the high accuracy of systems, which is indispensable for process control and quality management in solar module production. It is recommended to calibrate after its installation or moving as well as once a year to fulfill the requirements of customer’s auditors. Learn more in the X Cal Data Sheet. LayTec has sucessfully launched a new tool for monitoring of Light Induced Degradation (LID) in solar cells. The system LID Scope was demonstrated at three major PV events: SNEC (China) IEEE PVSC (U.S.) and EUPVSEC/Intersolar Europe (Germany). Our sales team could demonstrate LID Scope in action to several hundreds booth visitors, more than 100 qualitative leads have asked for a commercial proposal!In China, LID Scope was awarded as one of the 'SNEC Top 10 Highlights' for its economic benefits: the tool enables fast and comprehensive LID tests already in the lab on the solar cell level.

It performs automated and repeatable degradation as well as routine tracking for fast production control and it is easy to handle.At the SNEC conference, Dr. Dominik Lausch of Fraunhofer CSP held a talk about 'Accelerated Quality Control for Light-Induced Degradation (LID) on solar cell level' and presented the results of his research with LID Scope. According to Mr. Lausch, “The PV industry continuously develops different techniques to prevent the loss of solar cell performance in the field. With LID Scope, manufacturers can quickly check the success of these methods and optimize their production processes much faster and easier.”PV Magazine interviewed the developers of LID Scope and published an article about how LID testing can help a PERC upgrade pay off (see May issue of the global edition). In the interview, Tobias Schenk of LayTec commented: “Cell producers need to be able to look closely at the LID effect as it has a direct impact on the price-per-watt they can charge.”For more information please visit our LID Scope page.

At ICMOVPE XVIII, we presented the talk ' This work is a result of a close collaboration between the team of Tony SpringThorpe at the National Research Council of Canada, Christoph Hums and co-workers at Fraunhofer HHI (Germany) and LayTec.During lattice matched growth of InGaAs on InP in an AIXTRON Crius reactor, the high-resolution wafer bow sensing (EpiCurve®TT Gen3 with ARS module) reached a resolution of 0.2 km -1! Two effects that contribute to the wafer bow were carefully separated: the lattice mismatch between layer and substrate as well as the vertical temperature gradient across the wafer resulting from temperature difference between wafer pocket and shower-head. In result, the lattice match of InGaAs to InP could be tuned in-situ with a ±50 ppm resolution – an accuracy that formerly could be achieved only by ex-situ X-ray diffraction (XRD). More than 80 researchers and engineers took part at LayTec's in-situ seminar in conjunction with ICMOVPE XVIII.

They discussed the latest research results and learned about new in-situ metrology developments. Dan Koleske of Sandia National Labs (USA) presented in-situ results of AlN/sapphire growth measured by EpiCurve®TT at his Taiyo Nippon Sanso SR4000 reactor.

The talk of Gary Tompa of Structured Materials Industries (SMI, USA) focused on integration and utiliziation of EpiTT in SMI’s Ga2O3 MOCVD system. Hilde Hardtdegen (Research Center Juelich, Germany) reported on finding narrow growth temperature windows for novel Ge 1Sb 2Te 4 2D materials by combining reflectance and temperature sensing of EpiR TT at her AIX 200 reactor.Finally, Oliver Schulz of LayTec gave an overview on latest modular adaptations of LayTec’s new Gen3 product lines to AIX Crius, AIX 6x2” and Veeco K700 reactors. Following the tradition, the second half of the seminar was devoted to in-depth discussions with and between our customers. For a PDF copy of our customers' talks or to receive information about our next seminars please contact. VCSELs grown on GaAs are currently emerging as a leading technology in rapidly expanding markets like Gesture Recognition, 3D imaging, datacomm and others. Following the request of our customers and utilizing the modular concept of our new Gen3 in-situ platform, LayTec has customized and expanded the related in-situ metrology performance for VCSEL epitaxy. In May, one of our lead users in Europe placed the first order for such a system called EpiTT/VCSEL.

The tool will be shipped by the beginning of 2017. Please visit the VCSEL page of our website to learn more about. We are proud to announce that AIXTRON SE has qualified, LayTec’s latest control and analysis software for EpiTT and EpiCurve® TT products. EpiNet 2016 is all about turning your metrology system’s in-situ data into high-level information. Christian Geng, Director of Technology at AIXTRON SE, said: “With EpiNet 2016, our customers have access to key features of LayTec Gen3 metrology tools on our AIXTRON’s MOCVD platform. The improved performance and related customized upgrade packages of EpiNet 2016 will add further values to AIXTRON driven epitaxy processes.” For more information about EpiNet 2016 extended analysis capabilities and features please contact.

LayTec is proud to announce that IQE plc has purchased a large number of LayTec's latest metrology systems for a fab-wide MOCVD process control. In close collaboration with IQE, we have implemented automated and highly precise new analysis algorithms into our Gen3 metrology tools, which utilize an updated XRD gauged.

This was the key to meet the demands of the world's leading compound semiconductor wafer foundry. With LayTec's in-situ metrology, the MOCVD systems of the fab can be tuned much faster to new and usually complex processes for best serving IQE's large customer base.Matthew Geen, Engineering & Operations Director at IQE commented: ”As the global leader in wafer outsourcing IQE is committed to deliver the highest product quality standards to its customers. LayTec’s new unrivalled growth process analysis offers a compelling alternative to expensive calibration runs by enabling us to extract material parameters in-situ during production.”According to LayTec's CTO Dr. Kolja Haberland: “LayTec is delighted to have worked closely with IQE, the world leading outsource manufacturer of epiwafers, to demonstrate the most advanced in-situ monitoring solutions and new algorithms for analysing critical growth parameters in a high volume, semiconductor manufacturing environment. Our systems cover a complete range of thin-film applications, providing access to all significant thin film growth parameters.”We are looking forward to the first results at IQE! Ultra-violet (UV) pyrometers like Pyro 400 have to collect very low intensity 400 nm thermal emission out of the GaN buffer layers. Until recently, emissivity correction was not possible for low noise 400 nm temperature reading and Fabry-Perot oscillations (FPOs) in the temperature signal were unavoidable.

However, LayTec’s new Pyro 400 Gen3 is now the first UV pyrometer with full emissivity correction. It uses a separate 410 nm broad-band reflection for emissivity correction and the three narrow-band reflectance channels of EpiTT (405/633/950 nm) remain in full operation.

The system is now available for Aixtron G4/G5 planetary reactors and Veeco K700 reactors. Learn more about advantages of the Gen3 product line and find the results of Pyro 400 Gen3 'stress test' at Veeco K700 on our website. At Jenoptik Diode Lab (Germany), LayTec monitor MOCVD growth of edge emitting laser bars. The tools are routinely used to calibrate growth rate and composition during calibration runs as well as to control production runs.

Specific key values, such as temperature or growth rate of specific layers on specific wafers, are extracted from the in-situ data and transferred into the MES (manufacturing execution system) for SPC (statistical process control). So, process stability can be monitored run-to-run and potential deviations can be detected immediately, paving the way for run-to-run control. A major European semiconductor manufacturer has qualified LayTec's EpiNet-SECS/GEM software package for MES integration in his power electronics production line!

The software continuously transfers comprehensive wafer related in-situ metrology data to the fab’s MES system throughout MOCVD runs: local wafer temperature, reflectance and wafer bow of up to 256 wafer zones. Furthermore, at the end of each epi run, the latest version of this software forwards to MES additional SPC information on growth rates, film compositions and surface roughness of pre-selected epi-steps.

Temperature measurements during MOCVD growth of GaN-on-silicon (GaN/Si) divices is rather challenging. Theoretically, conventional infra-red (IR) pyrometry should be sufficiently because the silicon substrate is IR absorbing in the full range of relevant growth temperatures. However, one artifact makes the feed-back control difficult and prohibits precise statistical process control in industrial applications: when GaN is grown, the temperature signal starts oscillating.We searched for a solution together with our partners at Otto-von-Guericke University of Magdeburg (Prof. Armin Dadgar and his team) and FBH (Dr. Frank Brunner) and found out that, no matter how perfect the IR pyrometer is, these oscillations are inevitable.

They are caused by a complex interaction between two effects: the IR transparent GaN/AlGaN strain-engineering and the defect reducing buffer structure on the one side, and, on the other side, the thermal IR radiation out of the silicon wafer that passes through the grown structure. Our solution was to use a pyrometry wavelength range in which the complex buffer layer structure Si/AlGaN/GaN/LT-AlGaN/GaN is not 'visible' for the pyrometer.Hence, we took LayTec's ultra-violet (UV) pyrometer, which was developed some years ago for GaN-on-sapphire growth in LED industry.

The results were so overwhelming, that we publish them now, although scientific papers with a detailed root-cause analysis are still in the pipeline and will be publish later this year. The UV pyrometer gives a very stable wafer temperature signal without oscillations during GaN growth.Furthermore, it became clear: the remaining oscillations in the IR pyrometry signal (red) are not the most important artifact. Due to interactions of the thermal IR radiation with the internal structure of the GaN/Si buffer, there is an additional downshift in this signal by about 15K! This effect we attribute to the fact that the thermal IR radiation coming out of the silicon loses its intensity while passing the relaxation area close to the Si/GaN interface.

These internal straylight losses depend on the Fabry-Perot resonance situation with the total GaN thickness and, therefore, also contribute to the IR temperature oscillations.Please find the detailed report on our. In October we announced the launch of LayTec's next generation in-situ metrology. Now, EpiTT Gen3 is available as the first representative of this product class!What is new in Gen3? The backbone of the metrology’s hardware and software is modularity. The new concept offers a much wider range of process specific customizations without compromising the robust and accurate performance our products are known for. Furthermore, the 24/7 operation is improved by separating data acquisition (based on ARM processors) from metrology control and analysis (based on MS Windows PC).In addition, Gen3 offers a significantly extended choice of process interfaces, e.g., SECS/GEM for communication with MES systems and Modbus for RIBER’s latest Crystal XE software for MBE. Besides, the real-time and post-growth data analysis functionality has been further improved.

Several completely new hardware components can be now combined with well proven working-horse modules that, of course, have been integrated into the new Gen3 platform, too.more. LayTec's in-situ metrology tool of the new generation EpiTT Gen3 offers a lot of advances for processes. Among them is the possibility to choose between two types of metrology heads: fiber-optical heads and the new parallel-beam heads. The latter is the tool of choice, e.g., for Close Coupled Showerhead (CCS) reactors, where the wafer-showerhead gap is adjusted during the run to avoid pre-reactions and achieve high growth rates in UV LED processes.

The measurement data on our show that EpiTT Gen3 with parallel beam heads delivers a very stable reflection and temperature signal despite the gap variation. Starting with Q1/2016, LayTec will ship in-situ metrology tools (EpiTT, EpiCurve® TT and Pyro 400) as part of the new and modular Gen3 class.

This 3rd generation of in-situ metrology offers a whole number of significant technology advances and is more flexible in customization to the needs of specific epitaxy processes. An important example of these improvements is our recent metrology progress for UV LED related MOCVD. Since 2010 LayTec has been working together with the Joint Lab GaN Optoelectronics of FBH (Berlin, Germany) and Technical University of Berlin (Group of Prof. Within the Zwanzig20 consortium “Advanced UV for Life”, our research target is the next generation technology for UV-B and UV-C III-Nitride-based LEDs. Find more about our participation in research consortia. At the recent in Beijing LayTec was happy to welcome more than 60 guests!

Prof. Dabing Li of Chinese Academy of Sciencies (CAS) reported about AlN buffer optimization for UV LED growth by means of the 405 nm reflectance. Ding Li (FBH) presented in-situ data of surface morphology during GaN growth on Ga2O3. Christoph Berger (Otto von Guericke University Magdeburg, Germany) held a talk on compensation of Ge-doping memory effects in III-nitride processes, i.e.

In highly doped GaN/GaN:Ge DBRs using 405 nm reflectance. This technique is also of high importance for avoiding Ga carry-over (memory) effects in AlGaN/AlN structures of UV LEDs.You can downloadFor other talks, please visit the page. Hanwha Q CELLS GmbH (Germany) has established into production of their PV modules. Heribert Raaf, Senior Vice President Manufacturing Thalheim of Hanwha Q CELLS stated: “The lamination process is one of the most critical production steps of module manufacturing. Thanks to, ensuring the high quality of our lamination process and the corresponding quality controls have become faster and easier. Implementing this innovation in our production line is a further step in our commitment to provide top-notch quality PV modules.

We are dedicated to making solar power the most reliable source of energy.' Meanwhile, Hanwha Q CELLS has deployed to all of its production sites worldwide to ensure high standard quality control of EVA encapsulation. At the next week, Hanwha Q CELLS will present results in the poster 'Evaluation of gel content measurement method for mass production of glass-foil based crystalline silicon PV modules'. The tests at Hanwha have proven that rovides extremely accurate measurements, faster and more exact process control, quality control, recipe evaluation and laminator characterization and enables an early detection of possible failures. For more information please ask mail@laytec.de for the PDF file of the poster. A new version of EpiCurve® TT has been developed for combined reflectance, wafer temperature and wafer bow measurements on large single-wafers in D125 high-speed rotation reactors. The first system will be shipped to a customer in USA in September 2015.

It closes a technology gap formerly existing for large single wafer configurations in high-speed rotation reactors due to limitations of scanning single-beam deflectometry. LayTec combined in this system its high-resolution multi-beam wafer bow sensing with 3-wavelength reflectance and wafer temperature measurement. The system is equipped with our very latest EpiNet software package that allows for thickness and composition monitoring for specific material classes at an accuracy level formerly reached only by XRD. For more information, please download the report in our. At last week’s OMVPE Workshop in BigSky (Montana) Dr. Frank Brunner presented his latest results on growth of (11-22) GaN / r-PSS in an AIX 2600G3-HT reactor (8x4” configuration). He underlined in his talk that cost-efficient growth process optimization for these semi-polar GaN structures on 100 mm PSS substrates would not have been possible without comprehensive in-situ metrology.

Hence, an EpiCurve® TT (for reflectance and wafer bow sensing) and a Pyro 400 (for GaN temperature control) worked together by utilizing the two viewports of this (modified)Aix 2600G3-HT reactor top-plate. 2 is shown how all details of the highly complex growth mode show-up in the combined reflectance, wafer bow and temperature data.For more information, please download the report in our. Recently LayTec and our R&D partners published high-accuracy high-temperature nk data of Arsenides and Phosphides enabling for these materials in-situ process control of layer thickness and composition at the same level of accuracy as XRD or PL CS ManTech 2015 and EWMOVPE 2015. At the forthcoming ICNS-11, we will present a similarly expanded and improved nk database for the III-Nitrides as part of the latest version of our EpiNet software.

These high accuracy nk data in conjunction with Pyro 400 wafer temperature control will open the pathway to a more comprehensive and direct SPC of III-Nitride based manufacturing on pss, silicon and, most importantly, on GaN wafers.For more details please see theTo learn more, please download our.

FileFixation.com is a new file sharing web service which gives you access to literally hundreds of thousands of direct downloads including software, games, movies, tv shows, mp3 albums, ebooks and more! Our downloads database is updated daily to provide the latest download releases on offer.To celebrate our launch we are offering unlimited full download access for FREE! This is a limited offer and will soon expire and revert back to the normal member price. We now have 301,072 downloads in the member section.

Take the FileFixation now for more detailed information! The word 'crack' in this context means the action of removing the copy protection from commercial software. A crack is a set of instructions or patch used to remove copy protection from a piece of software or to unlock features from a demo or time-limited trial. There are crack groups who work together in order to crack software, games, etc. If you search for Valentin Software Pvsol Premium 7.5 R4 Crack, you will often see the word 'crack' amongst the results which means it is the full version of the product. The word 'serial' means a unique number which identifies the license of the software as being valid.

All retail software uses a serial number or key of some form. The installation often requires the user to enter a valid serial number to proceed.

A serial can also be referred to as a 'CD Key'. When you search for Valentin Software Pvsol Premium 7.5 R4 Serial for example, you may find the word 'serial' amongst the results. This usually means your software download includes a serial number of some sort. The word 'keygen' means a small program that can generate a cd key, activation number, license code, serial number, or registration number for a piece of software.

KeyGen is a shortened word for Key Generator. A keygen is made available through crack groups free to download. When writing a keygen, the author will identify the algorithm used in creating a valid cd key.

Once the algorithm is identified they can then incorporate this into the keygen. If you search a download site for Valentin Software Pvsol Premium 7.5 R4 Keygen, this often means your download includes a keygen.